Title :
A high current drop GaAs bistable switch
Author :
Izadpanah, S.H. ; Jeppsson, B. ; Jeppesen, P. ; JØndrup, P.
Author_Institution :
Technical University of Denmark, Lyngby, Denmark
Abstract :
A current drop of 41.5 percent and a switching time of 110 ps is reported for a 10-µm supercritically doped n+-n-n+GaAs transferred electron device operated as a bistable switch into a 25-Ω resistive load. An investigation to check that no microwave oscillations occur is presented.
Keywords :
Anodes; Circuits; Coaxial components; Electromagnetic heating; Gallium arsenide; Gunn devices; Low voltage; Microwave devices; Switches; Threshold voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9577
