DocumentCode
931671
Title
A high current drop GaAs bistable switch
Author
Izadpanah, S.H. ; Jeppsson, B. ; Jeppesen, P. ; JØndrup, P.
Author_Institution
Technical University of Denmark, Lyngby, Denmark
Volume
62
Issue
8
fYear
1974
Firstpage
1166
Lastpage
1167
Abstract
A current drop of 41.5 percent and a switching time of 110 ps is reported for a 10-µm supercritically doped n+-n-n+GaAs transferred electron device operated as a bistable switch into a 25-Ω resistive load. An investigation to check that no microwave oscillations occur is presented.
Keywords
Anodes; Circuits; Coaxial components; Electromagnetic heating; Gallium arsenide; Gunn devices; Low voltage; Microwave devices; Switches; Threshold voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1974.9577
Filename
1451507
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