• DocumentCode
    931855
  • Title

    Defect creation in electronic materials

  • Author

    Cheng, Li-Jen ; Corbett, James W.

  • Author_Institution
    State University of New York at Albany, Albany, N.Y.
  • Volume
    62
  • Issue
    9
  • fYear
    1974
  • Firstpage
    1208
  • Lastpage
    1214
  • Abstract
    The status of understanding of defect creation in electronic materials, primarily semiconductors, is reviewed. Included are a survey of threshold values and a discussion of the various parameters on which the energy dependence of damage production depends. The subjects of subthreshold damage and ionization-produced damage are also discussed.
  • Keywords
    Atomic measurements; Electronics industry; Energy measurement; Fabrication; Fitting; Ionization; Physics; Production; Semiconductivity; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1974.9597
  • Filename
    1451527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=931855