Title :
Planar analog transistor
Author_Institution :
Fujitsu Ltd., Kobe, Japan
Abstract :
Diffused planar structure of analog transistor is developed using high-resistivity n-type silicon. Experimental characteristic of the device is compared with a conventional theory, and certain apparent discrepancy is qualitatively explained. The obtained unilateral power gain is 8.2 dB at 1 GHz.
Keywords :
Conductivity; Dielectric substrates; Differential equations; Fabrication; Gallium arsenide; Maxwell equations; Nonlinear equations; Silicon; Solitons; Tellurium;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1974.9613
