DocumentCode
9321
Title
Discrete Geometric Approach for the Three-Dimensional Schrödinger Problem and Comparison With Finite Elements
Author
Specogna, Ruben ; Trevisan, F.
Author_Institution
Dipt. di Ing. Elettr., Gestionale e Meccanica, Univ. di Udine, Udine, Italy
Volume
50
Issue
2
fYear
2014
fDate
Feb. 2014
Firstpage
189
Lastpage
192
Abstract
The numerical modeling of nanoscale electron devices needs the development of accurate and efficient numerical methods, in particular, for the numerical solution of the Schrödinger problem. If FEMs allow an accurate geometric representation of the device, they lead to a discrete counterpart of Schrödinger problem in terms of a computationally heavy generalized eigenvalue problem. Exploiting the geometric structure behind the Schrödinger problem, we will construct a numerically efficient discrete counterpart of it, yielding to a standard eigenvalue problem. We will also show how the two approaches are only partially akin to each other even when lumping is applied.
Keywords
MOSFET; Schrodinger equation; eigenvalues and eigenfunctions; finite element analysis; nanoelectronics; semiconductor device models; FEM; FinFETs; computationally heavy generalized eigenvalue problem; discrete geometric approach; finite element analysis; geometric structure; nanoscale electron devices; numerical methods; semiconductor device modeling; three-dimensional Schrödinger problem; Eigenvalues and eigenfunctions; Finite element analysis; Iron; Mathematical model; Matrices; Standards; Vectors; FEM; Schrodinger equation; nanoelectronics; semiconductor device modeling;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2013.2281073
Filename
6749187
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