• DocumentCode
    9321
  • Title

    Discrete Geometric Approach for the Three-Dimensional Schrödinger Problem and Comparison With Finite Elements

  • Author

    Specogna, Ruben ; Trevisan, F.

  • Author_Institution
    Dipt. di Ing. Elettr., Gestionale e Meccanica, Univ. di Udine, Udine, Italy
  • Volume
    50
  • Issue
    2
  • fYear
    2014
  • fDate
    Feb. 2014
  • Firstpage
    189
  • Lastpage
    192
  • Abstract
    The numerical modeling of nanoscale electron devices needs the development of accurate and efficient numerical methods, in particular, for the numerical solution of the Schrödinger problem. If FEMs allow an accurate geometric representation of the device, they lead to a discrete counterpart of Schrödinger problem in terms of a computationally heavy generalized eigenvalue problem. Exploiting the geometric structure behind the Schrödinger problem, we will construct a numerically efficient discrete counterpart of it, yielding to a standard eigenvalue problem. We will also show how the two approaches are only partially akin to each other even when lumping is applied.
  • Keywords
    MOSFET; Schrodinger equation; eigenvalues and eigenfunctions; finite element analysis; nanoelectronics; semiconductor device models; FEM; FinFETs; computationally heavy generalized eigenvalue problem; discrete geometric approach; finite element analysis; geometric structure; nanoscale electron devices; numerical methods; semiconductor device modeling; three-dimensional Schrödinger problem; Eigenvalues and eigenfunctions; Finite element analysis; Iron; Mathematical model; Matrices; Standards; Vectors; FEM; Schrodinger equation; nanoelectronics; semiconductor device modeling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2013.2281073
  • Filename
    6749187