Title :
The MOS capacitor amplifier
Author :
Figueiredo, Pedro M. ; Vital, João C.
Author_Institution :
Chipidea Microclectronica SA, Porto Salvo, Portugal
fDate :
3/1/2004 12:00:00 AM
Abstract :
It is well known that low noise amplification can be performed by using a capacitor whose capacitance can be controlled. In this paper, it is shown that changing the inversion level of a MOS transistor allows voltage amplification. The theoretical characterization of this amplifier in terms of gain and harmonic distortion is made, and comparisons with HSPICE results are performed. Finally, some practical considerations to improve the performance of the circuit are presented.
Keywords :
MOS capacitors; MOS integrated circuits; MOSFET; SPICE; harmonic distortion; parametric amplifiers; HSPICE; MOS capacitor amplifier; MOS transistor; MOS varactor; capacitance; circuit performance; gain distortion; harmonic distortion; inversion level; noise amplification; parametric amplifier; voltage amplification; Capacitance; Circuits; Harmonic distortion; Helium; MOS capacitors; MOSFETs; Performance gain; Switches; Varactors; Voltage;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2003.822427
