DocumentCode
932287
Title
The MOS capacitor amplifier
Author
Figueiredo, Pedro M. ; Vital, João C.
Author_Institution
Chipidea Microclectronica SA, Porto Salvo, Portugal
Volume
51
Issue
3
fYear
2004
fDate
3/1/2004 12:00:00 AM
Firstpage
111
Lastpage
115
Abstract
It is well known that low noise amplification can be performed by using a capacitor whose capacitance can be controlled. In this paper, it is shown that changing the inversion level of a MOS transistor allows voltage amplification. The theoretical characterization of this amplifier in terms of gain and harmonic distortion is made, and comparisons with HSPICE results are performed. Finally, some practical considerations to improve the performance of the circuit are presented.
Keywords
MOS capacitors; MOS integrated circuits; MOSFET; SPICE; harmonic distortion; parametric amplifiers; HSPICE; MOS capacitor amplifier; MOS transistor; MOS varactor; capacitance; circuit performance; gain distortion; harmonic distortion; inversion level; noise amplification; parametric amplifier; voltage amplification; Capacitance; Circuits; Harmonic distortion; Helium; MOS capacitors; MOSFETs; Performance gain; Switches; Varactors; Voltage;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2003.822427
Filename
1275618
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