• DocumentCode
    932332
  • Title

    Evaluation of bipolar junction transistor transconductance in practical applications

  • Author

    Ferris, Clifford D.

  • Author_Institution
    Dept. of Electr. Eng., Wyoming Univ., Laramie, WY, USA
  • Volume
    36
  • Issue
    3
  • fYear
    1993
  • fDate
    8/1/1993 12:00:00 AM
  • Firstpage
    293
  • Lastpage
    295
  • Abstract
    The traditional expression that relates the transconductance (g m) to collector current in a bipolar junction transistor is based upon germanium devices. When this expression is used to estimate performance of modern silicon bipolar-junction transistors (BJTs), significant errors may result. An alternative expression for gm which is supported by experimental measurements is presented
  • Keywords
    bipolar transistors; electric admittance; elemental semiconductors; silicon; Si; bipolar junction transistor transconductance; collector current; Books; Circuits; Current measurement; Germanium; Q measurement; SPICE; Senior members; Silicon devices; Transconductance; Voltage;
  • fLanguage
    English
  • Journal_Title
    Education, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9359
  • Type

    jour

  • DOI
    10.1109/13.231506
  • Filename
    231506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=932332