Title :
Evaluation of bipolar junction transistor transconductance in practical applications
Author :
Ferris, Clifford D.
Author_Institution :
Dept. of Electr. Eng., Wyoming Univ., Laramie, WY, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
The traditional expression that relates the transconductance (g m) to collector current in a bipolar junction transistor is based upon germanium devices. When this expression is used to estimate performance of modern silicon bipolar-junction transistors (BJTs), significant errors may result. An alternative expression for gm which is supported by experimental measurements is presented
Keywords :
bipolar transistors; electric admittance; elemental semiconductors; silicon; Si; bipolar junction transistor transconductance; collector current; Books; Circuits; Current measurement; Germanium; Q measurement; SPICE; Senior members; Silicon devices; Transconductance; Voltage;
Journal_Title :
Education, IEEE Transactions on
