Self-consistent transit-time model for a resonant tunnel diode

Author

Zheng, Yun ; Lake, Roger

Author_Institution

Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA

Volume

51

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

535

Lastpage

541

Abstract

We present a self-consistent compact model for the small-signal impedance of a resonant tunnel diode (RTD) with a finite collector transit time. The effect of the collector transit time on the device impedance is described for three In_0.53Ga_0.47AsAlAs-InAs RTDs with current densities ranging from 14 kA/cm² to 570 kA/cm² with various collector spacer lengths for dc biasing in both the positive and negative differential resistance regions.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; impedance matching; indium compounds; resonant tunnelling diodes; semiconductor device models; In_0.53Ga_0.47AsAlAs-InAs; collector spacer; current densities; dc biasing; device impedance; finite collector transit time; negative differential resistance region; positive differential resistance region; resonant tunnel diode; self-consistent transit-time model; small-signal impedance; Current density; Diodes; Electron emission; Frequency; Impedance; Lakes; Local oscillators; Noise reduction; Resonant tunneling devices; Wideband;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.824683

Filename

1275636