Title :
Self-consistent transit-time model for a resonant tunnel diode
Author :
Zheng, Yun ; Lake, Roger
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA
fDate :
4/1/2004 12:00:00 AM
Abstract :
We present a self-consistent compact model for the small-signal impedance of a resonant tunnel diode (RTD) with a finite collector transit time. The effect of the collector transit time on the device impedance is described for three In0.53Ga0.47AsAlAs-InAs RTDs with current densities ranging from 14 kA/cm2 to 570 kA/cm2 with various collector spacer lengths for dc biasing in both the positive and negative differential resistance regions.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; impedance matching; indium compounds; resonant tunnelling diodes; semiconductor device models; In0.53Ga0.47AsAlAs-InAs; collector spacer; current densities; dc biasing; device impedance; finite collector transit time; negative differential resistance region; positive differential resistance region; resonant tunnel diode; self-consistent transit-time model; small-signal impedance; Current density; Diodes; Electron emission; Frequency; Impedance; Lakes; Local oscillators; Noise reduction; Resonant tunneling devices; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.824683
