Direct tunneling-induced floating-body effect in 90-nm pseudo-kink-free PD SOI pMOSFETs with DTMOS-like behavior and low input power consumption

This paper reports the investigation of the direct tunneling-induced floating-body effect in 90-nm H-gate floating body partially depleted (PD) silicon-on-insulator (SOI) pMOSFETs with dynamic-threshold MOS (DTMOS)-like behavior and low input power consumption. Based on this paper, with the decrease of the gate-oxide thickness, the direct-tunneling current will dominate the floating body potential of H-gate PD SOI pMOSFETs, which makes the floating body potential highly gate voltage dependent like DTMOS behavior with a larger drain current. However, the input power consumption is still kept lower. Simultaneously, the highly gate voltage dependent direct-tunneling current will reduce the influence of the impact ionization current on the neutral region with a higher kink onset-voltage. It contributes to the pseudo-kink-free phenomenon in 90-nm H-gate floating body PD SOI pMOSFETs.