Surface flashover in silicon-vacuum systems

Author

Gradinaru, G. ; Madangarli, V.P. ; Sudarshan, T.S.

Author_Institution

Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA

Volume

28

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

555

Lastpage

565

Abstract

The properties of the prebreakdown response of silicon-vacuum systems under HV excitation are presented. The most frequent case of system breakdown by surface flashover is treated. The particular properties of the system response in the high-field pulsed regime demonstrate the essential differences between the silicon-vacuum and solid-insulator-vacuum systems. The main ideas of a new physical model of surface flashover in silicon-vacuum systems are presented. The properties of the surface flashover response are discussed in terms of the proposed model. A concept called system surface flashover sensitivity is introduced to provide a better understanding of the surface flashover physical process in silicon-vacuum systems

Keywords

electric breakdown; flashover; surface discharges; vacuum insulation; HV excitation; high-field pulsed regime; physical process; prebreakdown response; silicon-vacuum systems; surface flashover; system breakdown; Dielectric breakdown; Electric breakdown; Flashover; Heating; Insulation; Semiconductor device breakdown; Surface charging; Surface treatment; Vacuum breakdown; Vacuum systems;

fLanguage

English

Journal_Title

Electrical Insulation, IEEE Transactions on

Publisher

ieee

ISSN

0018-9367

Type

jour

DOI

10.1109/14.231538

Filename

231538