Title :
Analysis of transient response and operating speed of MOBILE
Author :
Matsuzaki, Hideaki ; Fukuyama, Hiroyuki ; Enoki, Takatomo
Author_Institution :
Photonics Labs., NTT Corp., Kanagawa, Japan
fDate :
4/1/2004 12:00:00 AM
Abstract :
To clarify the relationship between the figures-of-merit of resonant tunneling diodes and the operating speed of a monostable-bistable transition logic element (MOBILE), we investigated the transient response of a MOBILE using a simple current-voltage characteristics model. We found that an unstable point in a MOBILE affects its operation, and false operation occurs when the amplitude of the clock signal is inappropriate. From a calculation of transient time using peak-to-valley current ratio (PVR) and peak current density (jP) as parameters, we also discovered that a sufficiently high jP and higher PVR (>6) are necessary for high-speed operations.
Keywords :
logic gates; resonant tunnelling; resonant tunnelling diodes; transient analysis; MOBILE; clock signal amplitude; current-voltage characteristics model; figures-of-merit; monostable-bistable transition logic element; operating speed; peak current density; peak-to-valley current ratio; resonant tunneling diodes; transient response analysis; transient time calculation; Circuits; Clocks; Diodes; HEMTs; Logic; MODFETs; Resonant tunneling devices; Transient analysis; Transient response; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.823800
