Analysis of transient response and operating speed of MOBILE

Author

Matsuzaki, Hideaki ; Fukuyama, Hiroyuki ; Enoki, Takatomo

Author_Institution

Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

51

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

616

Lastpage

622

Abstract

To clarify the relationship between the figures-of-merit of resonant tunneling diodes and the operating speed of a monostable-bistable transition logic element (MOBILE), we investigated the transient response of a MOBILE using a simple current-voltage characteristics model. We found that an unstable point in a MOBILE affects its operation, and false operation occurs when the amplitude of the clock signal is inappropriate. From a calculation of transient time using peak-to-valley current ratio (PVR) and peak current density (j_P) as parameters, we also discovered that a sufficiently high j_P and higher PVR (>6) are necessary for high-speed operations.

Keywords

logic gates; resonant tunnelling; resonant tunnelling diodes; transient analysis; MOBILE; clock signal amplitude; current-voltage characteristics model; figures-of-merit; monostable-bistable transition logic element; operating speed; peak current density; peak-to-valley current ratio; resonant tunneling diodes; transient response analysis; transient time calculation; Circuits; Clocks; Diodes; HEMTs; Logic; MODFETs; Resonant tunneling devices; Transient analysis; Transient response; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.823800

Filename

1275648