Title :
Hot-carrier degradation phenomena in lateral and vertical DMOS transistors
Author :
Moens, Peter ; Van den bosch, G. ; Groeseneken, Guido
Author_Institution :
AMI Semicond., Oudenaarde, Belgium
fDate :
4/1/2004 12:00:00 AM
Abstract :
The hot-carrier degradation behavior of both a lateral and a vertical integrated DMOS transistor is investigated in detail by the analysis of the electrical data, charge pumping measurements and two-dimensional device simulations. Upon hot-carrier stress, two different, and competing degradation mechanisms are present: channel electron mobility reduction due to interface trap formation, and injection and trapping of hot holes in the accumulation region of the transistor. It will be shown that the latter mechanism is absent in the vertical DMOS.
Keywords :
MOSFET; charge injection; electron mobility; electron traps; hot carriers; semiconductor device measurement; semiconductor device models; channel electron mobility reduction; charge pumping measurements; electrical data analysis; hot hole injection; hot hole trapping; hot-carrier degradation phenomena; hot-carrier stress; integrated DMOS transistor; interface trap formation; lateral DMOS transistors; two-dimensional device simulations; vertical DMOS transistors; Analytical models; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Electron mobility; Electron traps; Hot carriers; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.824688
