A simple method to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors

Author

Lee, Seonghearn

Author_Institution

Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki-Do, South Korea

Volume

51

Issue

4

fYear

2004

fDate

4/1/2004 12:00:00 AM

Firstpage

647

Lastpage

650

Abstract

A new and direct method is proposed to determine intrinsic (C_μ) and extrinsic (C_μx) base-collector junction capacitances of bipolar junction transistors (BJTs). The voltage dependent curves of C_μ and C_μx are obtained by using a new Y-parameter equation that is derived from a simplified "cut-off mode" equivalent circuit including ac current crowding capacitance. This new method is superior to several conventional ones, because it remains valid when there is ac emitter current crowding. The superiority of the new method has been verified by observing much better agreement of modeled gain with measured ones than the conventional method.

Keywords

bipolar transistors; capacitance; semiconductor device measurement; work function; ac current crowding capacitance; ac emitter current crowding; base-collector junction capacitances; bipolar junction transistors; bipolar transistors; capacitance extraction; cut-off mode equivalent circuit; extrinsic base-collector; intrinsic base-collector; voltage dependent curves; Bipolar transistors; Capacitance; Circuit simulation; Equations; Equivalent circuits; Germanium silicon alloys; Packaging; Proximity effect; Radio frequency; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.823801

Filename

1275654