DocumentCode :
932718
Title :
Yield Considerations for Ion-Implanted GaAs MMIC´s
Author :
Gupta, Aditya ; Petersen, Wendell C. ; Decker, D.R.
Volume :
31
Issue :
1
fYear :
1983
Firstpage :
16
Lastpage :
20
Abstract :
An ion-implantation based process is described for fabricating GrAs monolithic microwave integrated circuits (MMIC´s) incorporating active devices ,RF circuitry, and bypass capacitors. Low ohmic contact resistance and good control of metal-insulator-metal (MIM) capacitance values is demonstrated and some factors affecting FET and capacitor yield are discussed. High dc yield of typical amplifier circuits is shown indicating that this process has the potential for achieving very high overall yields in a production environment. Good yield of functional MMIC modules with multicircuit complexity is projected.
Keywords :
Gallium arsenide; Integrated circuit yield; MIM capacitors; MMICs; Microwave FET integrated circuits; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency; Radiofrequency integrated circuits;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1983.1131420
Filename :
1131420
Link To Document :
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