Title :
On the improvement of gate voltage swings in δ-doped GaAs/In xGa1-xAs/GaAs pseudomorphic heterostructures
Author :
Hsu, Wei-Chou ; Shieh, Hir-Ming ; Kao, Ming-Jer ; Hsu, Rong-Tay ; Wu, Yu-Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan
fDate :
9/1/1993 12:00:00 AM
Abstract :
Significant improvements in gate voltage swings in heterostructures prepared by low-pressure metalorganic chemical vapor deposition are discussed. Structures utilizing a compositionally graded InxGa1-xAs channel exhibited a very flat transconductance region of 2 V. The gate voltage swings of single and double δ-doped GaAs/In0.25Ga0.75As/GaAs structures were 2.5 and 2.8 V, respectively. All structures also exhibited high extrinsic transconductance as well as high saturation current densities
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junctions; two-dimensional electron gas; δ-doped GaAs/InxGa1-xAs/GaAs; 2.5 V; 2.8 V; GaAs-InxGa1-xAs-GaAs; MODFET; compositionally graded; gate voltage swings; high extrinsic transconductance; high saturation current densities; low-pressure metalorganic chemical vapor deposition; pseudomorphic heterostructures; very flat transconductance region; Doping; Gallium arsenide; HEMTs; Impurities; Indium gallium arsenide; MODFET circuits; MODFET integrated circuits; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
