Precise modeling of hot carrier gate current in short-channel MOSFET´s

Author

El-Hennawy, Adel E. ; Mobarek, Owaish H.

Author_Institution

Dept. of Phys., King Abdul Aziz Univ., Jeddah, Saudi Arabia

Volume

40

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

1645

Lastpage

1652

Abstract

A powerful model which considers the fact that the values of the channel and carrier temperatures T and T_c vary with position in the bulk and channel is considered. It reveals that the energy distribution of hot carriers deviates from the well-known Maxwellian distribution by a small but nonnegligible perturbation and evaluates the dependence of this deviation of the device technology, geometry, and biasing conditions. The model helps to remove important discrepancies between the old hot-carrier models and measurements

Keywords

hot carriers; insulated gate field effect transistors; semiconductor device models; Maxwellian distribution; biasing conditions; carrier temperatures; channel temperature; device technology; energy distribution; geometry; hot carrier gate current; hot carriers; precise modelling; short-channel MOSFET´s; Circuit optimization; Degradation; Geometry; Hot carrier injection; Hot carriers; MOSFET circuits; Predictive models; Temperature dependence; Temperature distribution; Very large scale integration;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.231570

Filename

231570