A new 2-D analytic threshold-voltage model for fully depleted short-channel SOI MOSFET´s

Author

Guo, Jwin-Yen ; Wu, Ching-Yuan

Author_Institution

Adv. Semicond. Device Res. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

40

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

1653

Lastpage

1661

Abstract

The exact solution of the 2-D Poisson equation for fully depleted SOI MOSFETs is derived by using a three-zone Green´s function solution technique. Based on the derived 2-D potential distribution, the front and back surface potential distributions in the Si film are analytically obtained and their accuracies are verified by 2-D numerical analysis. The calculated minimum surface potential and its location are used to analyze the drain-induced barrier-lowering effect and further to develop an analytic threshold-voltage model. Comparisons between the developed analytic threshold-voltage model and the 2-D numerical analysis are made. It is shown that excellent agreements are obtained for wide ranges of device structure parameters and applied biases

Keywords

Green´s function methods; insulated gate field effect transistors; numerical analysis; semiconductor device models; surface potential; 2-D Poisson equation; 2-D analytic threshold-voltage model; Si-SiO₂; applied biases; drain-induced barrier-lowering effect; fully depleted short-channel SOI MOSFET´s; minimum surface potential; numerical analysis; potential distribution; three-zone Green´s function solution technique; Dielectrics; Doping profiles; Eigenvalues and eigenfunctions; MOSFET circuits; Numerical analysis; Permittivity; Poisson equations; Semiconductor device modeling; Semiconductor films; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.231571

Filename

231571