Boundary-condition-induced current overshoot in short GaAs samples

Author

Khan, Sanjay A. ; Gutmann, Ronald J.

Author_Institution

AT&T Bell Lab., Murray Hill, NJ, USA

Volume

40

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

1695

Lastpage

1699

Abstract

The effect of boundary conditions on current overshoot observed in transient nonstationary simulations of electron transport in submicrometer bars of GaAs is described. Noting that the one-valley model for GaAs does not give rise to observable overshoot when the spatially independent Boltzmann transport equation (BTE) is solved, significant current overshoot is reported when the same model is used in the solution of the spatially dependent BTE with replacement boundary conditions. The spatially unidimensional, time-dependent BTE is solved for undoped GaAs samples with lengths varying between 0.2 and 1 μm. The amount of current overshoot varies depending on the length of the sample and is seen to be as high as 10%. The phenomenon is explained using the moments of the Boltzmann equation

Keywords

III-V semiconductors; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; many-valley semiconductors; 0.2 to 1 micron; Boltzmann transport equation; GaAs; boundary conditions; current overshoot; electron transport; one-valley model; semiconductor; submicrometer bars; transient nonstationary simulations; Bars; Boltzmann equation; Boundary conditions; Distribution functions; Effective mass; Electrons; Gallium arsenide; Scattering; Silicon; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.231577

Filename

231577