Title :
A new approach to determine the drain-and-source series resistance of LDD MOSFET´s
Author :
Chung, S.S.-S. ; Lee, Jenq-Sheng
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
9/1/1993 12:00:00 AM
Abstract :
A method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET´s is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values
Keywords :
insulated gate field effect transistors; semiconductor device models; LDD MOSFET´s; channel length; drain-and-source series resistance; Current measurement; Electrical resistance measurement; Length measurement; MOS devices; MOSFET circuits; Parameter extraction; Resistors; SPICE; Voltage; Wiring;
Journal_Title :
Electron Devices, IEEE Transactions on
