Title :
Comments, with reply, on "AlGaAs/GaAs HBT for high-temperature application" by K. Fricke et al
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
Abstract :
The commenter discusses several aspects of the above-titled work by K. Fricke et al. (ibid., vol. 39, pp. 1977-1981, Sept. 1992). These concern the physics of the saturation in an HBT and the collector leakage current. In their reply, to demonstrate the second effect, Fricke et al. report that the collector leakage current at different ambient temperatures was measured in common base configuration. They discuss the influence of the hole leakage current on the base current.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; leakage currents; AlGaAs-GaAs; HBT; base current; collector leakage current; hole leakage current; semiconductors; Current measurement; Diodes; Electron emission; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Leakage current; Physics; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
