DocumentCode :
933177
Title :
A Limiter for High-Power Millimeter-Wave Systems
Author :
Armstrong, Albert L. ; Anand, Yogi
Volume :
31
Issue :
2
fYear :
1983
Firstpage :
238
Lastpage :
241
Abstract :
A high-power limiter for use in millimeter-wave systems has been designed and demonstrated. The RF control is provided by an array of p-i-n diodes fabricated into the surface of a high-resistivity silicon window. Orientation-dependent etching of the silicon is used to build diodes with parallel injection surfaces. The window is mounted into the waveguide using a metal membrane which simplifies construction and lowers cost.
Keywords :
Capacitance; Doping profiles; Electrons; Microwave circuits; Microwave devices; Millimeter wave technology; Power generation; Radio frequency; Schottky diodes; Varactors;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1983.1131465
Filename :
1131465
Link To Document :
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