DocumentCode
933177
Title
A Limiter for High-Power Millimeter-Wave Systems
Author
Armstrong, Albert L. ; Anand, Yogi
Volume
31
Issue
2
fYear
1983
Firstpage
238
Lastpage
241
Abstract
A high-power limiter for use in millimeter-wave systems has been designed and demonstrated. The RF control is provided by an array of p-i-n diodes fabricated into the surface of a high-resistivity silicon window. Orientation-dependent etching of the silicon is used to build diodes with parallel injection surfaces. The window is mounted into the waveguide using a metal membrane which simplifies construction and lowers cost.
Keywords
Capacitance; Doping profiles; Electrons; Microwave circuits; Microwave devices; Millimeter wave technology; Power generation; Radio frequency; Schottky diodes; Varactors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1983.1131465
Filename
1131465
Link To Document