Title :
Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers
Author :
Al-Hosiny, Najm M. ; Henning, Ian D. ; Adams, Michael J.
Author_Institution :
Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK
fDate :
6/1/2006 12:00:00 AM
Abstract :
We have studied experimentally and theoretically the dynamics of electron density in a semiconductor laser subject to a wide range of optical injection strength. Within the locking bandwidth, three-dimensional injection locking stability maps were generated to present a complete picture of locking. Beyond the locking range, resonance frequency shifts were observed and systematically investigated. This phenomenon was successfully correlated with the variation of carrier density and theoretically verified.
Keywords :
electron density; laser mode locking; semiconductor lasers; carrier density; electron density; locking bandwidth; optical frequency shifts; optical injection; resonance frequency shifts; semiconductor lasers; three-dimensional injection locking stability maps; Bandwidth; Charge carrier density; Electron optics; Injection-locked oscillators; Laser theory; Laser transitions; Resonance; Resonant frequency; Semiconductor lasers; Stability; Cavity resonance shift; charge carrier density; injection locking; optical injection; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2006.874754
