A fully integrated temperature compensation technique for piezoresistive pressure sensors

Author

Akbar, Muhammad ; Shanblatt, Michael A.

Author_Institution

Coll. of Signals, Rawalpindi, Pakistan

Volume

42

Issue

3

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

771

Lastpage

775

Abstract

A fully integrated temperature compensation technique for piezoresistive pressure sensors is presented. The technique is suitable for batch fabricated sensors operable over a temperature range of -40°C-130°C and a pressure range of 0-310 kPa. The implementing hardware for the technique is developed and verified through PSpice and VHDL simulations. The technique is very effective for pressure values below 240 kPa and provides reasonable results for higher pressures. The technique is structurally simple and uses standard IC fabrication technologies

Keywords

compensation; digital simulation; electric sensing devices; electronic engineering computing; integrated circuit technology; piezoelectric transducers; pressure sensors; -40 to 130 degC; 0 to 310 kPa; PSpice; VHDL simulations; batch fabricated sensors; integrated temperature compensation; piezoresistive pressure sensors; standard IC fabrication technologies; Force measurement; Gaussian processes; Magnetic field measurement; Magnetic flux; Magnetic flux density; Magnetic levitation; Magnetic sensors; Piezoresistance; Probes; Temperature sensors;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.231607

Filename

231607