• DocumentCode
    933325
  • Title

    CW oscillation characteristics of GaAs Schottky-barrier gate field-effect transistors

  • Author

    Maeda, Minoru ; Takahashi, Susumu ; Kodera, Hiroshi

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    63
  • Issue
    2
  • fYear
    1975
  • Firstpage
    320
  • Lastpage
    321
  • Abstract
    The CW oscillation characteristics of GaAs Schottky-barrier gate FET´s have been examined at 10 GHz. The maximum output power of 41.2 mW and the maximum efficiency of 15.6 percent have been obtained for the GaAs FET with a gate length of 1.5 µm and an electrode width of 300 µm. The experimental results have shown that the GaAs FET possesses promising features for an oscillator application as well as an amplifier application.
  • Keywords
    Circuits; Frequency; Gallium arsenide; Gunn devices; Microwave FETs; Microwave oscillators; Power generation; Schottky diodes; Signal design; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1975.9740
  • Filename
    1451670
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=933325