DocumentCode :
933476
Title :
Large Signal Design of GaAs FET Oscillators Using Input Dielectric Resonators
Author :
Podcameni, Abelardo ; Bermudez, Luis Afonso
Volume :
31
Issue :
4
fYear :
1983
Firstpage :
358
Lastpage :
361
Abstract :
A dielectric resonator may be placed at the input of an active two-port device (FET or microwave transistor) yielding a stable frequency source. For this input configuration, a large signal design is presented. The method is simple, and power output prevision is also reached. The practical results obtained with an X-band medium-power oscillator are presented.
Keywords :
Birefringence; Dielectrics; Frequency; Gallium arsenide; Microwave FETs; Optical resonators; Optimized production technology; Oscillators; Signal design; Thickness measurement;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1983.1131498
Filename :
1131498
Link To Document :
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