Title :
Calculation of critical charge of bipolar memory circuits
Author_Institution :
Unisys, San Diego, CA, USA
fDate :
2/1/1989 12:00:00 AM
Abstract :
Two types of responses to alpha-particle-induced disturbance in bipolar memory circuits are differentiated. One is charge sensitive, and the other one is current sensitive. A method of calculating the critical charge for the current-sensitive bipolar memory circuits is proposed in order to evaluate the soft-error sensitivity of various memory circuits
Keywords :
alpha-particle effects; bipolar integrated circuits; integrated memory circuits; random-access storage; RAMs; alpha-particle-induced disturbance; bipolar memory circuits; charge sensitive; critical charge calculation; current sensitive; method of calculating; soft error sensitivity; soft-error sensitivity; Alpha particles; Circuit simulation; Doping; Particle tracking; Pulse circuits; Resistors; Silicon; Solid state circuits; Space vector pulse width modulation; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
