Title :
Single barrier varactors for submillimeter wave power generation
Author :
Nilsen, Svein M. ; Grönqvist, Hans ; Hjelmgren, Hans ; Rydberg, Anders ; Kollberg, Erik L.
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
4/1/1993 12:00:00 AM
Abstract :
Theoretical work on single barrier varactor (SBV) diodes indicates that the efficiency of a tripler with a SBV diode has a maximum for a considerably smaller capacitance variation than previously thought. SBV diodes based on GaAs, InGaAs and InAs have been fabricated and their DC properties have been tested. Detailed modeling of the carrier transport properties of the SBV device is carried out in two steps. First, the semiconductor transport equations are solved simultaneously, using a finite difference scheme in one dimension. Second, the calculated I -V and C-V characteristics are used by a multiplier simulator to calculate the optimum impedances and output powers at the frequencies of interest. The authors have developed an analysis technique which complements the harmonic balance technique. Simulations for a case study of a 750-GHz multiplier show that InAs diodes perform favorably compared to GaAs diodes
Keywords :
frequency multipliers; semiconductor device models; solid-state microwave devices; submillimetre wave devices; varactors; 750 GHz; C-V characteristics; DC properties; GaAs; I-V characteristics; InAs; InGaAs; SBV diode; analysis technique; carrier transport properties; conversion efficiency; finite difference scheme; modeling; multiplier; multiplier simulator; optimum impedances; output powers; power generation; semiconductor transport equations; single barrier varactor; submillimeter wave; tripler; Capacitance; Difference equations; Finite difference methods; Gallium arsenide; Impedance; Indium gallium arsenide; Power generation; Semiconductor diodes; Testing; Varactors;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
