DocumentCode :
933846
Title :
Parameter extraction of microwave transistors using a hybrid gradient descent and tree annealing approach
Author :
Skaggs, Steven G. ; Gerber, Jason ; Bilbro, Griff ; Steer, Michael B.
Author_Institution :
High Frequency Electron. Lab., North Carolina State Univ., Raleigh, NC, USA
Volume :
41
Issue :
4
fYear :
1993
fDate :
4/1/1993 12:00:00 AM
Firstpage :
726
Lastpage :
729
Abstract :
Tree annealing is a robust optimization scheme which can be used to find the valleys of an error surface. The problem of entrapment in local minima is not a factor with this type of optimization, but it is much slower than gradient-based techniques. The method presented here attempts to take advantage of the speed of gradient-based methods and of the efficient pseudorandom searching abilities of tree annealing. The result is a technique which behaves as a directed multistart gradient method. All minima encountered during optimization are recorded, thus providing alternatives in case of a nonphysical final solution. The technique is used in the extraction of a modified Materka-Kacprzak model of a GaAs MESFET
Keywords :
Schottky gate field effect transistors; optimisation; semiconductor device models; solid-state microwave devices; transistors; GaAs; MESFET; directed multistart gradient method; error function; gradient descent; gradient-based techniques; hybrid method; microwave transistors; modified Materka-Kacprzak model; parameter extraction; pseudorandom searching; robust optimization scheme; tree annealing; Equivalent circuits; Gallium arsenide; Gradient methods; MESFETs; Microwave circuits; Microwave transistors; Parameter extraction; Predictive models; Robustness; Simulated annealing;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.231673
Filename :
231673
Link To Document :
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