Title :
Effect of undepleted high-resistivity region on microwave efficiency of GaAs IMPATT diodes
Author :
Aono, Y. ; Okuto, Y.
Author_Institution :
Nippon Electric Company, Kawasaki, Japan
fDate :
4/1/1975 12:00:00 AM
Abstract :
Degradation of the microwave efficiency due to the undepleted high-resistivity epitaxial region was experimentally found to be remarkably, small on GaAs X-band conventional-type IMPATT diodes. The result seems to be consistent with large low-field drift mobility for electrons in GaAs. Present study confirms the superiority of n-GaAs over other materials for IMPATT diode use.
Keywords :
Degradation; Gallium arsenide; Integrated circuit technology; Isolation technology; Leakage current; Metallization; Microwave transistors; Monolithic integrated circuits; Ohmic contacts; Schottky diodes;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9813
