• DocumentCode
    934092
  • Title

    Effect of undepleted high-resistivity region on microwave efficiency of GaAs IMPATT diodes

  • Author

    Aono, Y. ; Okuto, Y.

  • Author_Institution
    Nippon Electric Company, Kawasaki, Japan
  • Volume
    63
  • Issue
    4
  • fYear
    1975
  • fDate
    4/1/1975 12:00:00 AM
  • Firstpage
    724
  • Lastpage
    726
  • Abstract
    Degradation of the microwave efficiency due to the undepleted high-resistivity epitaxial region was experimentally found to be remarkably, small on GaAs X-band conventional-type IMPATT diodes. The result seems to be consistent with large low-field drift mobility for electrons in GaAs. Present study confirms the superiority of n-GaAs over other materials for IMPATT diode use.
  • Keywords
    Degradation; Gallium arsenide; Integrated circuit technology; Isolation technology; Leakage current; Metallization; Microwave transistors; Monolithic integrated circuits; Ohmic contacts; Schottky diodes;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1975.9813
  • Filename
    1451743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=934092