Title :
Effects of tunneling on high-efficiency IMPATT avalanche diodes
Author :
Chive, M. ; Constant, E. ; Lefebvre, M. ; Pribetich, J.
Author_Institution :
Université des Sciences et Techniques de Lille, Villeneuve d´´Ascq, France
fDate :
5/1/1975 12:00:00 AM
Abstract :
A theoretical and experimental study is presented of the effects of tunnel injection on high-efficiency IMPATT avalanche diodes characterized by a high low-doping profile. Some characteristics usually observed in such high-efficiency IMPATT oscillators are explained, taking into account the effects of tunneling.
Keywords :
Cathodes; Doping; Electrons; Equations; Indium phosphide; Schottky barriers; Schottky diodes; Thermionic emission; Threshold current; Tunneling;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9838
