DocumentCode
934353
Title
A simple method of bipolar transistor field factor measurement
Author
Bhat, K.N.
Author_Institution
Indian Institute of Technology, Madras, India
Volume
63
Issue
5
fYear
1975
fDate
5/1/1975 12:00:00 AM
Firstpage
828
Lastpage
829
Abstract
A method of bipolar transistor field factor measurement is described. The method is based on the measurement of the open-circuit voltage between the collector-base terminals when a forward bias voltage is applied across the emitter-base terminals. The theory and the experimental measurement on different transistor types are presented.
Keywords
Bipolar transistors; Capacitance measurement; Circuits; Electrons; Germanium alloys; Impurities; Q measurement; Silicon alloys; Voltage measurement;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1975.9840
Filename
1451770
Link To Document