Title :
A numerical model for two-dimensional transient simulation of amorphous silicon thin-film transistors
Author :
McMacken, John R F ; Chamberlain, Savvas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
5/1/1992 12:00:00 AM
Abstract :
A model based on a linearized solution of the Shockley-Read-Hall trapping expressions is presented. It allows these equations to be eliminated from the system matrix. This results in significantly reduced memory requirements and execution times. To illustrate the approach, the switch-on and switch-off transients of a thin-film transistor were simulated. These results are compared with ones obtained from the full two-dimensional transient numerical model. It is shown that the linearized model can simulate a wide variety of device behavior, providing close agreement with the full model at a fraction of the cost
Keywords :
computational complexity; semiconductor device models; thin film transistors; transients; Shockley-Read-Hall trapping expressions; amorphous Si; execution times; linearized model; linearized solution; memory requirements; numerical model; switch-off transients; switch-on transients; thin-film transistors; two-dimensional transient simulation; Amorphous materials; Amorphous silicon; Costs; Distribution functions; Electron traps; Numerical models; Poisson equations; Silicon devices; Steady-state; Thin film transistors;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
