DocumentCode :
934821
Title :
Dependence of the read diode characteristics on the current multiplication factor in the avalanche zone
Author :
Roy, S.K. ; Som, B. ; Pal, B.B.
Author_Institution :
University of Calcutta, Calcutta, India
Volume :
63
Issue :
7
fYear :
1975
fDate :
7/1/1975 12:00:00 AM
Firstpage :
1072
Lastpage :
1073
Abstract :
The effect of the finite current multiplication factor in the avalanche zone on the impedance of a Read diode has been investigated. The magnitude of the negative resistance has been found to decrease with the lowering of the multiplication factor M while the reactance does not appreciably change. The avalanche and resonant frequencies become different when M becomes finite and are markedly dependent on it.
Keywords :
Admittance; Charge carrier processes; Current density; Diodes; Electric fields; Equations; Impedance; Ionization; Resonant frequency; Space charge;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1975.9883
Filename :
1451813
Link To Document :
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