Title :
The low temperature gating characteristics of thyristors
Author :
Menhart, Steve ; Hudgins, Jerry L. ; Portnoy, William M.
Author_Institution :
Dept. of Eng. Technol., Arkansas Univ., Little Rock, AR, USA
Abstract :
The gate threshold current of an inverter thyristor (1300 V, 420 A average) has been measured as a function of decreasing temperature between 25 and -180°C. The simple two transistor thyristor model was used to calculate the temperature dependence of the minimum required gate current by examining the temperature dependencies of the two common-base alphas in the equivalent circuit. The requirements for successful gating of thyristors are examined
Keywords :
equivalent circuits; invertors; semiconductor device models; semiconductor device testing; switching circuits; thyristor applications; thyristors; 1300 V; 25 to -180 degC; 420 A; common-base alphas; equivalent circuit; gate threshold current; inverter; low temperature gating characteristics; semiconductor device testing; temperature dependence; thyristors; two transistor thyristor model; Circuit testing; Current measurement; Industry Applications Society; Inverters; Pulse circuits; Pulse measurements; Switches; Temperature dependence; Threshold current; Thyristors;
Journal_Title :
Industry Applications, IEEE Transactions on
