Low-Noise MESFET´s for Ion-Implanted GaAs MMIC´s

Fabrication considerations for low-noise FET´s in ion-implanted GaAs monolithic microwave integrated circuits (MMIC´S) are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low-noise MMIC FET´s fabricated along these lines show good microwave performance tbrongh 18 GHz, approaching the performance available from similar discrete FET´s. 0.8- µm gate-length MMIC FET´s with a noise figure of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low-noise applications in ion-implanted GaAs MMIC´s.