Semi-analytical modeling and analysis in three dimensions of the optical carrier injection and diffusion in a semiconductor substrate

Author

Gary, René ; Arnould, Jean-Daniel ; Vilcot, Anne

Author_Institution

Inst. of Microelectron., Grenoble Univ., France

Volume

24

Issue

5

fYear

2006

fDate

5/1/2006 12:00:00 AM

Firstpage

2163

Lastpage

2170

Abstract

In order to be faster and more precise than any numerical technique for the computation of the photo-induced plasma in semiconductor, an analytical solution has to be developed. In this paper, the Hankel transform is used to simplify the solution of the differential equation of second order with nonconstant coefficient, known as the diffusion equation. The resulting expression of the three-dimensional (3-D) carrier density includes all the physical parameters of the substrate and the laser beam as well. A parametric study was also feasible using the developed expressions.

Keywords

Hankel transforms; carrier density; differential equations; diffusion; optical control; semiconductor device models; substrates; Hankel transform; diffusion equation; laser beam; optical carrier injection; photo-induced plasma; semiconductor substrate diffusion; three-dimensional carrier density; Charge carrier density; Charge carrier lifetime; Charge carrier processes; Differential equations; Laser beams; Microwave devices; Optical sensors; Radiative recombination; Substrates; Transforms; Hankel transforms; optical control; photo-induced; three-dimensional (3-D) resolution;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2006.872284

Filename

1632255