DocumentCode :
935470
Title :
A broad-band negative conductance GaAs TED
Author :
Jeppesen, P. ; Jeppsson, B. ; Jøndrup, P.
Author_Institution :
Technical University of Denmark, Lyngby, Denmark
Volume :
63
Issue :
9
fYear :
1975
Firstpage :
1364
Lastpage :
1365
Abstract :
Small-signal negative conductances from 5 to 17 GHz in both voltage polarities are reported for CW-operated 10-µm supercritically doped n+nn+GaAs transferred electron devices. The conceptually different behavior in the two polarities for the frequency dependence of the negative conductance is interpreated by means of computer simulations, and the stabilizing mechanisms involved are discussed.
Keywords :
Admittance; Bandwidth; Cathodes; Doping; Frequency; Gallium arsenide; Semiconductor device measurement; Stability criteria; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1975.9950
Filename :
1451880
Link To Document :
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