Numerical modeling of gate turn-off thyristor using SICOS

Author

Ni, Da-Guang ; Rojat, Gerard ; Clerc, Guy ; Chante, Jean-Pierre

Author_Institution

Centre de Genie Electr. de Lyon, Ecully, France

Volume

40

Issue

3

fYear

1993

fDate

6/1/1993 12:00:00 AM

Firstpage

326

Lastpage

333

Abstract

A numerical model of gate turn-off thyristors (GTOs) is presented. The concept of a controlled switch realized by a controlled current source is first introduced. Using this basic model, an equivalent circuit for the GTO is given. Using the GTO characteristics given by manufacturers, the equations connected with all the parameters of the equivalent circuit are deduced, and all of the parameters are determined. A sample study is presented. Simulation of this numerical model with the SICOS program gave results in accordance with the experiment

Keywords

digital simulation; electronic engineering computing; equivalent circuits; numerical analysis; semiconductor device models; software packages; thyristors; GTO; SICOS; controlled current source; controlled switch; digital simulation; equivalent circuit; gate turn-off thyristor; numerical model; semiconductor device models; software packages; Circuit simulation; Diodes; Equivalent circuits; Numerical models; Physics; Power semiconductor switches; Switching circuits; Thyristors; Virtual colonoscopy; Voltage control;

fLanguage

English

Journal_Title

Industrial Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0278-0046

Type

jour

DOI

10.1109/41.232212

Filename

232212