DocumentCode :
935816
Title :
A 22 - 24-GHz Cryogenically Cooled GaAs FET Amplifier
Author :
Cappello, A. ; Pierro, J.
Volume :
32
Issue :
3
fYear :
1984
Firstpage :
226
Lastpage :
230
Abstract :
This paper describes the design and performance of a cryogenically cooled low-noise FET amplifier operating in the 22-24-GHz range. The amplifier employs five cascaded single-ended gain stages and an integral bandpass filter. Noise temperatures in the 200 K range with an associated gain of 28 dB are typical for the nine cooled units built to date.
Keywords :
Circuits; Coplanar waveguides; FETs; Frequency measurement; Gallium arsenide; K-band; Low-noise amplifiers; Noise figure; Scattering parameters; Temperature;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1984.1132657
Filename :
1132657
Link To Document :
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