Title :
Improved method for evaluating the static parameters of the Ebers--Moll transistor model
Author_Institution :
Post Office Research Department, Ipswich, UK
Abstract :
Existing programs for evaluating the static parameters of the Ebers--Moll transistor model provide either high accuracy or economical operation. The method presented here as a computer program combines both high accuracy and economy. Examples of the improved agreement between experimental data and theoretical estimates are given.
Keywords :
bipolar transistors; computer-aided circuit analysis; semiconductor device models; bipolar transistor; computer program; static parameters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760026
