DocumentCode :
935821
Title :
Improved method for evaluating the static parameters of the Ebers--Moll transistor model
Author :
Rowlands, M.G.
Author_Institution :
Post Office Research Department, Ipswich, UK
Volume :
12
Issue :
1
fYear :
1976
Firstpage :
34
Lastpage :
36
Abstract :
Existing programs for evaluating the static parameters of the Ebers--Moll transistor model provide either high accuracy or economical operation. The method presented here as a computer program combines both high accuracy and economy. Examples of the improved agreement between experimental data and theoretical estimates are given.
Keywords :
bipolar transistors; computer-aided circuit analysis; semiconductor device models; bipolar transistor; computer program; static parameters;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19760026
Filename :
4239571
Link To Document :
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