• DocumentCode
    935832
  • Title

    Control of Schottky barrier height by thin high-doped layer

  • Author

    Hariu, T. ; Shibata, Y.

  • Author_Institution
    Tohoku University, Sendai, Japan
  • Volume
    63
  • Issue
    10
  • fYear
    1975
  • Firstpage
    1523
  • Lastpage
    1524
  • Abstract
    Possible ways of controlling Schottky barrier height for a given material are discussed. The values of doping density and thickness of the high-doped layer in metal-n+(thin)-n structure for the required barrier height are given.
  • Keywords
    Computational modeling; Frequency modulation; Injection-locked oscillators; Magnetic properties; Microwave oscillators; Phase modulation; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1975.9986
  • Filename
    1451916
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=935832