Title :
Control of Schottky barrier height by thin high-doped layer
Author :
Hariu, T. ; Shibata, Y.
Author_Institution :
Tohoku University, Sendai, Japan
Abstract :
Possible ways of controlling Schottky barrier height for a given material are discussed. The values of doping density and thickness of the high-doped layer in metal-n+(thin)-n structure for the required barrier height are given.
Keywords :
Computational modeling; Frequency modulation; Injection-locked oscillators; Magnetic properties; Microwave oscillators; Phase modulation; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor materials;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.9986
