Title :
Transistor transit-time oscillator (translator)
Author_Institution :
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Abstract :
Operation of a novel junction-transistor structure as a microwave negative-resistance diode is described. Negative-resistances of ¿25 ¿ at 10 GHz are predicted, corresponding to negative Q-factors of ¿5. Large-signal c.w. power outputs of the order of 1 W from individual devices are indicated. It is expected that device operation in the frequency range 1¿100 GHz should be possible at voltage bias levels from 5 to 50 V.
Keywords :
bipolar transistors; microwave oscillators; negative resistance; solid-state microwave devices; transit time devices; large signal CW power outputs; microwave negative resistance diode; negative Q-factors; transistor transit time oscillator; translator; voltage bias levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760029
