DocumentCode
935854
Title
A Mechanism for Water Induced Excess Reverse Dark Current on Grown Germanium NV-P Junctions
Author
Law, J.T.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Volume
42
Issue
9
fYear
1954
Firstpage
1367
Lastpage
1370
Abstract
An ionic conduction process in the multilayers of water adsorbed on a germanium n-p junction bar is proposed to explain the increase in reverse dark current observed when the relative humidity to which the unit is exposed is increased. Experimental evidence supporting this postulate is given and discussed.
Keywords
Atomic measurements; Conductivity; Dark current; Entropy; Germanium; Humidity; Impurities; Surface treatment; Temperature; Water heating;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1954.274567
Filename
4051810
Link To Document