Title :
A Mechanism for Water Induced Excess Reverse Dark Current on Grown Germanium NV-P Junctions
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N.J.
Abstract :
An ionic conduction process in the multilayers of water adsorbed on a germanium n-p junction bar is proposed to explain the increase in reverse dark current observed when the relative humidity to which the unit is exposed is increased. Experimental evidence supporting this postulate is given and discussed.
Keywords :
Atomic measurements; Conductivity; Dark current; Entropy; Germanium; Humidity; Impurities; Surface treatment; Temperature; Water heating;
Journal_Title :
Proceedings of the IRE
DOI :
10.1109/JRPROC.1954.274567
