DocumentCode
935878
Title
Design of Broad-Band Power GaAs FET Amplifiers
Author
Tajima, Yusuke ; Miller, Patrick D.
Volume
32
Issue
3
fYear
1984
fDate
3/1/1984 12:00:00 AM
Firstpage
261
Lastpage
267
Abstract
A model is presented for the drain-gate breakdown phenomenon of GaAs FET´s, based on experimental results. this breakdown model is added to a previously published large-signal model and incorporated in a powerful computer-aided design program called LSFET. The program is capable of searching for the optimum power load for an FET and simulating the power performance of multistage amplifiers. The design of power amplifiers is discussed in detail, using the knowledge gained from LSFET. Data is presented from a fabricated monolithic broad-band power amplifier chip showing good agreement between measured results and simulated curves.
Keywords
Design automation; Electric breakdown; Fabrication; Frequency; Gallium arsenide; Microwave FETs; Power amplifiers; Power system modeling; Predictive models; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1984.1132663
Filename
1132663
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