DocumentCode
935916
Title
2-20-GHz GaAs Traveling-Wave Power Amplifier
Author
Ayasli, Yalcin ; Reynolds, Leonard D. ; Mozzi, Robert L. ; Hanes, Larry K.
Volume
32
Issue
3
fYear
1984
fDate
3/1/1984 12:00:00 AM
Firstpage
290
Lastpage
295
Abstract
Power amplification in FET traveling-wave amplifiers is examined, and the mechanisms which limit power capability of the amplifier are identified. Design considerations for power amplification are discussed. A novel single-stage and two-stage monolithic GaAs traveling-wave power amplifier with over 250-mW power output in the 2-20-GHz frequency range is described.
Keywords
Broadband amplifiers; Circuits; FETs; Gallium arsenide; Microwave amplifiers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Transconductance; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1984.1132667
Filename
1132667
Link To Document