Title :
X-band performance of GaAs power f.e.t.s
Author :
Macksey, H.M. ; Adams, R.L. ; McQuiddy, D.N. ; Wisseman, W.R.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
The results of X-band measurements on GaAs power f.e.t.s are reported. These devices are fabricated with a simple planar process. Devices with output powers of 1 W or more at 9 GHz with 4 dB gain have been fabricated from more than a dozen slices. The highest output powers observed with 4 dB gain are 1.78 W at 9 GHz and 2.5 W at 8 GHz. Devices have been operated with 46% power-added efficiency at 8 GHz.
Keywords :
field effect transistors; power transistors; solid-state microwave devices; 9 GHz; GaAs power FETs; X-band performance; output powers; power added efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760044
