Title :
Monte Carlo simulation of current transport in forward-biased Schottky-barrier diodes
Author :
Baccarani, G. ; Mazzone, A.M.
Author_Institution :
UniversitÃ\xa0 di Bologna, Istituto di Elettronica, Bologna, Italy
Abstract :
The transport of carriers across the semiconductor space-charge region of a forward-biased Schottky-barrier diode is investigated by a Monte Carlo simulation of the transport process. The electron distribution function at the m.s. boundary turns out to be hemi-Maxwellian, but the electron concentration is about one-half of that predicted by the t.d. theory.
Keywords :
Monte Carlo methods; Schottky-barrier diodes; Monte Carlo simulation; current transport; electron concentration; electron distribution function; forward biased Schottky barrier diodes; semiconductor space charge region;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19760048
