Title :
A reliable fifteen-percent-efficiency Silicon double-drift-region IMPATT diode
Author :
Lekholm, A. ; Sellberg, F. ; Weissglas, P. ; Andersson, G.
Author_Institution :
Siemens-Elema AB, Solna, Sweden
Abstract :
This letter describes the development of a medium-power high-efficiency high-reliability double-drift-region silicon IMPATT diode intended for use in telecommunication satellites at 11-13 GHz. The design is based on large-signal computer simulations. The highest efficiency obtained is 15.1 percent. A pilot reliability test has accumulated 7700 dc device hours at 270°C with no failures. During screening, 6000 RF device hours with no failures at approximately 180°C were also noted.
Keywords :
Computer simulation; Digital integrated circuits; Diodes; Fabrication; Gold; Regions; Satellites; Signal design; Silicon; Solid state circuits;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.10012
