DocumentCode
936060
Title
Effect of heavier doped junction side on efficiency of Si IMPATT diodes
Author
Vollmann, E.
Author_Institution
Universität München, München, Germany
Volume
63
Issue
11
fYear
1975
Firstpage
1615
Lastpage
1617
Abstract
For n- and p-type Si IMPATT diodes, the effect of the doping profile of the heavier doped junction side was calculated in terms of the dc-to-RF efficiency. In p-type diodes, the electric field existing within this region leads to a decrease in efficiency. This effect is assumed to be one reason why the theoretically expected high efficiencies of these diodes have not been obtained experimentally.
Keywords
Current density; Diodes; Electric breakdown; Gold; Metallization; Radio frequency; Silicon; Silver; Temperature; Testing;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1975.10013
Filename
1451942
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