Title :
Effect of heavier doped junction side on efficiency of Si IMPATT diodes
Author_Institution :
Universität München, München, Germany
Abstract :
For n- and p-type Si IMPATT diodes, the effect of the doping profile of the heavier doped junction side was calculated in terms of the dc-to-RF efficiency. In p-type diodes, the electric field existing within this region leads to a decrease in efficiency. This effect is assumed to be one reason why the theoretically expected high efficiencies of these diodes have not been obtained experimentally.
Keywords :
Current density; Diodes; Electric breakdown; Gold; Metallization; Radio frequency; Silicon; Silver; Temperature; Testing;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.10013
