Title :
Compound barriers in thin oxide film diodes
Author :
Padmanabhan, K.R. ; Sathianandan, K.
Author_Institution :
University of Poona, Poona, India
Abstract :
High-frequency reverse bias measurements are made on sandwiched evaporated oxide films of tungsten and molybdenum. The linearity of the capacitance-voltage pilot gives an indication of Schottky-type barrier. The intercept and the n values obtained from the plot are used to calculate the thickness of the space charge region. It is concluded that a compound barrier exists at the interface.
Keywords :
Capacitance measurement; Electrical resistance measurement; Electrodes; Linearity; Rectifiers; Schottky diodes; Semiconductor diodes; Space charge; Transistors; Voltage;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1975.10014
