Stabilization of MOS structures by Boron ion implantation

Bias and temperature stress measurements have been used to study the effect of¹¹B ion implantation into MOS structures. The boron energies were selected so that the projected range of the implanted distribution was approximately equal to the device oxide thickness. Boron ion doses ranged from 10¹¹to 2 × 10¹²/cm². The bias temperature stress consisted of 10⁶V/cm applied at 300°C for 5 min. In all cases, the stability of the implanted capacitors was found to be significantly improved over the unimplanted.